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Electronic versus Lattice Match for Metal-Semiconductor Epitaxial Growth: Pb on Ge(111).
- Source :
-
Physical Review Letters . 8/5/2011, Vol. 107 Issue 6, p66802.1-66802.5. 5p. - Publication Year :
- 2011
-
Abstract
- Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to 3 × 3on involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1 × 1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with super- imposed bilayer oscillations. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTORS
*METALS
*EPITAXY
*THIN films
*OSCILLATIONS
Subjects
Details
- Language :
- English
- ISSN :
- 00319007
- Volume :
- 107
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physical Review Letters
- Publication Type :
- Academic Journal
- Accession number :
- 67015286
- Full Text :
- https://doi.org/10.1103/PhysRevLett.107.066802