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Nitrogen reaction with silicon: Investigation of Si undercooling and Si3N4 growth

Authors :
Beaudhuin, M.
Zaidat, K.
Duffar, T.
Lemiti, M.
Source :
Journal of Crystal Growth. Dec2011, Vol. 336 Issue 1, p77-81. 5p.
Publication Year :
2011

Abstract

Abstract: The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1K when the concentration of nitrogen in the solidified droplet increases from 0 to 600ppmw. Several α- and β-Si3N4 morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00220248
Volume :
336
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Crystal Growth
Publication Type :
Academic Journal
Accession number :
66947112
Full Text :
https://doi.org/10.1016/j.jcrysgro.2011.09.036