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Nitrogen reaction with silicon: Investigation of Si undercooling and Si3N4 growth
- Source :
-
Journal of Crystal Growth . Dec2011, Vol. 336 Issue 1, p77-81. 5p. - Publication Year :
- 2011
-
Abstract
- Abstract: The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1K when the concentration of nitrogen in the solidified droplet increases from 0 to 600ppmw. Several α- and β-Si3N4 morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 336
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 66947112
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2011.09.036