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Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure.
- Source :
-
Journal of Applied Physics . Oct2011, Vol. 110 Issue 8, p084509. 5p. - Publication Year :
- 2011
-
Abstract
- We propose a specifically designed structure to fabricate thin-film transistors using amorphous indium-gallium-zinc-oxide (a-IGZO) films as the active channel layers. The I-shaped gate electrode is employed to define the channel width, reducing overlaps between the gate and source/drain electrodes. The devices with such a structure exhibit acceptable electrical performance and stability after annealing treatment. The XPS data show that the as-deposited a-IGZO film has not a very dense structure that may induce shallow traps. A shallow trap model is proposed to explain the large threshold voltage shifts of the as-deposited device. Annealing treatment can eliminate these shallow traps and improve the device stability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 110
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 66902960
- Full Text :
- https://doi.org/10.1063/1.3656444