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Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser.
- Source :
-
Optical & Quantum Electronics . Oct2011, Vol. 42 Issue 11-13, p659-666. 8p. 1 Diagram, 5 Graphs. - Publication Year :
- 2011
-
Abstract
- A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03068919
- Volume :
- 42
- Issue :
- 11-13
- Database :
- Academic Search Index
- Journal :
- Optical & Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 66886481
- Full Text :
- https://doi.org/10.1007/s11082-011-9444-0