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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors.
- Source :
-
Applied Physics A: Materials Science & Processing . 2002, Vol. 75 Issue 3, p387. 3p. - Publication Year :
- 2002
-
Abstract
- The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger’s and Poisson’s equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7×10[sup 19] cm[sup -3] . In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GAS distribution
*ELECTRONS
*GALLIUM
*ALUMINUM
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 75
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 6688369
- Full Text :
- https://doi.org/10.1007/s003390100978