Interaction correction to conductivity of AlxGa1-xAs/GaAs double quantum well heterostructures near the balance.

The electron-electron interaction quantum correction to the conductivity of the gated double well AlxGa1-xAs/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced (i.e., for equal electron concentrations in the wells) and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior: it is practically the same for both regimes. [ABSTRACT FROM AUTHOR]