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Tight binding within the fourth moment approximation: Efficient implementation and application to liquid Ni droplet diffusion on graphene.

Authors :
Los, J. H.
Bichara, C.
Pellenq, R. J. M.
Source :
Physical Review B: Condensed Matter & Materials Physics. Aug2011, Vol. 84 Issue 8, p85455:1-85455:12. 12p.
Publication Year :
2011

Abstract

Application of the fourth moment approximation (FMA) to the local density of states within a tight binding description to build a reactive, interatomic interaction potential for use in large scale molecular simulations, is a logical and significant step forward to improve the second moment approximation, standing at the basis of several, widely used (semi-)empirical interatomic interaction models. In this paper we present a sufficiently detailed description of the FMA and its technical implications, containing the essential elements for an efficient implementation in a simulation code. Using a recent, existing FMA-based model for C-Ni systems, we investigated the size dependence of the diffusion of a liquid Ni cluster on a graphene sheet and find a power law dependence of the diffusion constant on the cluster size (number of cluster atoms) with an exponent very close to -2/3, equal to a previously found exponent for the relatively fast diffusion of solid clusters on a substrate with incommensurate lattice matching. The cluster diffusion exponent gives rise to a specific contribution to the cluster growth law, which is due to cluster coalescence. This is confirmed by a simulation for Ni cluster growth on graphene, which shows that cluster coalescence dominates the initial stage of growth, overruling Oswald ripening. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10980121
Volume :
84
Issue :
8
Database :
Academic Search Index
Journal :
Physical Review B: Condensed Matter & Materials Physics
Publication Type :
Academic Journal
Accession number :
66836165
Full Text :
https://doi.org/10.1103/PhysRevB.84.085455