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Evidence for the formation of two phases during the growth of SrTiO3 on silicon.

Authors :
Niu, G.
Penuelas, J.
Largeau, L.
Vilquin, B.
Maurice, J. L.
Botella, C.
Hollinger, G.
Saint-Girons, G.
Source :
Physical Review B: Condensed Matter & Materials Physics. Feb2011, Vol. 83 Issue 5, p54105:1-54105:9. 9p.
Publication Year :
2011

Abstract

Epitaxial SrTiO3 (STO)/Si templates open a unique opportunity for the integration of ferroelectric oxides, such as BaTiO3 on silicon and for the realization of new devices exploiting ferroelectricity. STO itself has been shown as ferroelectric at room temperature when deposited in thin layers on Si, while bulk STO is tetragonal and, thus, ferroelectric below 105 K. Here, we demonstrate the coexistence, at room temperature, of strained cubic and tetragonal phases in thin STO/Si layers. The tetragonal STO phase presents a pronounced tetragonality for thickneßes up to 24 ML. Above this thickneß, the strained cubic STO phase starts relaxing while the tetragonal STO phase progreßively transits to cubic STO. The origin of the simultaneous formation of these two phases is analyzed and is attributed to oxygen segregation at the early stages of the growth. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10980121
Volume :
83
Issue :
5
Database :
Academic Search Index
Journal :
Physical Review B: Condensed Matter & Materials Physics
Publication Type :
Academic Journal
Accession number :
66802538
Full Text :
https://doi.org/10.1103/PhysRevB.83.054105