Drive current enhancement in p-tunnel FETs by optimization of the process conditions

MLA

Leonelli, D., et al. “Drive Current Enhancement in P-Tunnel FETs by Optimization of the Process Conditions.” Solid-State Electronics, vol. 65–66, Nov. 2011, pp. 28–32. EBSCOhost, https://doi.org/10.1016/j.sse.2011.06.030.

APA

Leonelli, D., Vandooren, A., Rooyackers, R., De Gendt, S., Heyns, M. M., & Groeseneken, G. (2011). Drive current enhancement in p-tunnel FETs by optimization of the process conditions. Solid-State Electronics, 65–66, 28–32. https://doi.org/10.1016/j.sse.2011.06.030

Chicago

Leonelli, D., A. Vandooren, R. Rooyackers, S. De Gendt, M.M. Heyns, and G. Groeseneken. 2011. “Drive Current Enhancement in P-Tunnel FETs by Optimization of the Process Conditions.” Solid-State Electronics 65–66 (November): 28–32. doi:10.1016/j.sse.2011.06.030.