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Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . Sep2011, Vol. 47 Issue 20, p1144-1145. 2p. 1 Diagram, 2 Graphs. - Publication Year :
- 2011
-
Abstract
- The near-infrared quantum efficiency of pin photodetectors based on a lattice-matched type-II InGaAs/GaAsSb absorption region has been measured. The quantum efficiencies for these devices are 80.2 and 57.8% at 1064 and 1550 nm, respectively. These results are comparable to the more commonly-used InGaAs/InP photodetectors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 47
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 66137133
- Full Text :
- https://doi.org/10.1049/el.2011.2146