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Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations

Authors :
Fu, D.
Zhang, R.
Wang, B.G.
Liu, B.
Xie, Z.L.
Xiu, X.Q.
Lu, H.
Zheng, Y.D.
Edwards, G.
Source :
Thin Solid Films. Sep2011, Vol. 519 Issue 22, p8013-8017. 5p.
Publication Year :
2011

Abstract

Abstract: The effect of alloying and expitaxial mismatch strain on the surface ultraviolet (UV) emission efficiencies of AlxGa1−xN films, pseudomorphically grown on both c- and m-plane AlyGa1−yN templates (x&lt;y) for various Al-content combinations, has been investigated under the framework of k&#183;p perturbation theory. The results indicate that the film/template Al-content combination with y&gt;−0.03+1.79x−0.06x2 (0&lt;x&lt;y&lt;1) for the c-plane case and the film/template with all y:x (0&lt;x&lt;y&lt;1) combinations for the m-plane case, are particularly suitable for obtaining efficient UV light emissions. In the latter case, it&#39;&#39;s also ideal for fabricating edge-emitting UV devices with predominant transverse electric mode. Furthermore, polarized emissions with high polarization degree can be achieved by properly tuning the y:x ratio for certain x. [Copyright &amp;y&amp; Elsevier]

Details

Language :
English
ISSN :
00406090
Volume :
519
Issue :
22
Database :
Academic Search Index
Journal :
Thin Solid Films
Publication Type :
Academic Journal
Accession number :
65043472
Full Text :
https://doi.org/10.1016/j.tsf.2011.05.075