Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon.

The article discusses a study of the structure of process-induced dislocation loops in silicons using three-dimensional X-ray diffraction imaging (3D-XRDI). The authors annealed the silicon samples using a Jiplelec JetFirst 200C thermal anneal system to begin the formation of dislocation loops (DL) around the indents. They recorded a series of X-ray topographs of both the indents and the DL using a charge-coupled device combined with a high-resolution scintillator crystal. The advantages of the 3D-XRDI technique are also discussed.