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Analysis on High-Frequency Characteristics of SOI Lateral BJTs With Self-Aligned External Base for 2-GHz RF Applications.
- Source :
-
IEEE Transactions on Electron Devices . Mar2002, Vol. 49 Issue 3, p414. 8p. 2 Diagrams, 9 Graphs. - Publication Year :
- 2002
-
Abstract
- Presents a study that aimed to characterize the silicon-on-insulator (SOI) lateral bipolar junction transistors (BJT) and to provide a path for performance improvement. Process flow of the SOI lateral BJT; Characteristics of a normal collector device formed by the self-aligned process with various emitter widths; Characteristics of wide collector structure.
- Subjects :
- *BIPOLAR transistors
*SILICON-on-insulator technology
*TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 6339107
- Full Text :
- https://doi.org/10.1109/16.987111