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Carbon nanotube seeded silicon crystal growth.

Authors :
Li, Y. F.
Li, H.
Sun, F. W.
Zhang, X. Q.
Liew, K. M.
Source :
Journal of Applied Physics. Jul2011, Vol. 110 Issue 1, p014307. 5p. 2 Diagrams, 2 Graphs.
Publication Year :
2011

Abstract

Crystal growth of liquid silicon on the heterogeneous surfaces of carbon nanotubes (CNTs) is simulated. Silicon atoms are concentrated to form perfect coaxial cylindrical configurations around CNT cores. The heredity effect makes silicon imprint cylindrical shapes of CNTs during the solidification. The CNTs have a great influence on the stacking sequence of silicon atoms. Growth competition between CNT cores is clearly observed, which results in defects at the shared interface. The internal potential field around CNTs is responsible for growth competition and the heredity effect. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
110
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
62808954
Full Text :
https://doi.org/10.1063/1.3603048