Properties of Pb(Zr0.52Ti0.48)O3, SrBi2Ta2O9, and Nd2Ti2O7 in a MFIS of Y2O3 Insulator Base Structure for Fe FET.

Ferroelectric films with three different typical structures, Pb(Zr0.52Ti0.48)O3 (PZT) with Perovskite, SrBi2Ta2O9 (SBT) with layered-Perovskite, and Nd2Ti2O7 (NT) with pseudo-pyrochlore, were prepared on Y2O3 to form a metal-ferroelectric-insulator-semiconductor structure. Our work involves understanding the relationships between retention properties and ferroelectric properties including interface and layer uniformity and insulator layer. NT possessed a relatively larger memory window and better retention property than SBT and PZT. Low permittivity, high coercive field, stable interface, and phase formation without compositional deviation from stoichiometry were found to be the most important control factors for a ferroelectric field effect transistor. [ABSTRACT FROM AUTHOR]