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Role of Fe3O4 as a p-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices.

Authors :
Zhang, Dan-Dan
Feng, Jing
Chen, Lu
Wang, Hai
Liu, Yue-Feng
Jin, Yu
Bai, Yu
Zhong, Yu-Qing
Sun, Hong-Bo
Source :
IEEE Journal of Quantum Electronics. May2011, Vol. 47 Issue 5, p591-596. 6p.
Publication Year :
2011

Abstract

Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N,N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4”-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189197
Volume :
47
Issue :
5
Database :
Academic Search Index
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
62560015
Full Text :
https://doi.org/10.1109/JQE.2011.2107503