Cite
Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond.
MLA
Paterson, G. W., et al. “Gadolinium Gallium Oxide/Gallium Oxide Insulators on GaAs and In0.53Ga0.47As N+ MOS Capacitors: The Interface State Model and Beyond.” Journal of Applied Physics, vol. 109, no. 12, June 2011, p. 124112. EBSCOhost, https://doi.org/10.1063/1.3599895.
APA
Paterson, G. W., Holland, M. C., Bentley, S. J., Thayne, I. G., & Long, A. R. (2011). Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), 124112. https://doi.org/10.1063/1.3599895
Chicago
Paterson, G. W., M. C. Holland, S. J. Bentley, I. G. Thayne, and A. R. Long. 2011. “Gadolinium Gallium Oxide/Gallium Oxide Insulators on GaAs and In0.53Ga0.47As N+ MOS Capacitors: The Interface State Model and Beyond.” Journal of Applied Physics 109 (12): 124112. doi:10.1063/1.3599895.