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Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy.
- Source :
-
Chinese Physics Letters . Jun2011, Vol. 28 Issue 6, p068102-068102. 1p. - Publication Year :
- 2011
-
Abstract
- We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780degC. However, the growth window to obtain an Al-droplet-free surface is too narrow to be well-controlled. However, the growth window can be greatly broadened by increasing the growth temperature up to 950degC, where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms. The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 28
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 61774034
- Full Text :
- https://doi.org/10.1088/0256-307X/28/6/068102