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Effects of growth pressure on the properties of p-GaN layers
- Source :
-
Journal of Crystal Growth . Jun2011, Vol. 325 Issue 1, p32-35. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: The influence of growth pressure on the properties of p-GaN grown by metal-organic chemical vapor deposition method was investigated. The p-GaN layers were grown at low temperature under growth pressures ranging from 100 to 400mbar. We find that higher growth pressure leads to lower Mg incorporation in the p-GaN layer and results in high resistivity of p-GaN grown at 400mbar. By optimizing the Cp2Mg/TMGa ratio, however, low sheet resistivity can be achieved for p-GaN grown at 100–300mbar. The p-GaN grown at 300mbar using optimal Cp2Mg/TMGa ratio of 1.3% shows the highest hole concentration of 5.0×1017 cm−3 and the consequent minimum sheet resistivity of 2.6×104 Ω/sq. The superior electrical properties are ascribed to the reduction of compensation effect for the layer grown under the high growth pressure. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 325
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 61258965
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2011.04.030