SrHfTiO high- k films deposited on Si by pulsed laser deposition.

The large band gap (3.58 eV) and dielectric properties ( ε=50) of bulk SrHfTiO (SHTO) make it a promising high- k material. SHTO films were deposited on p-type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance-voltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10 A/cm at −2 V bias voltage. [ABSTRACT FROM AUTHOR]