Low-frequency noise in SOI pseudo-MOSFET with pressure probes

Abstract: Low-frequency noise (LFN) is generated by interactions of the channel carriers with interface traps and oxide charges. Therefore, noise measurements on silicon on insulator (SOI) wafers can give important information about the state of the interfaces and their defect density. Here, noise measurements at wafer level were performed using the pseudo-MOSFET (Ψ-MOSFET) configuration. 1/f noise behavior in relatively thick and ultra-thin SOI layers is obtained. No probe pressure dependence of the noise is observed. The influence of wafer surface states is showed and further confirmed in passivated SOI samples. Origins of noise generation are discussed. [Copyright &y& Elsevier]