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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates
- Source :
-
Journal of Crystal Growth . May2011, Vol. 323 Issue 1, p187-190. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and , respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 323
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 60929157
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2010.11.162