Cite
Microwave PtSi-Si schottky-barrier-detector diode fabrication using an implanted active layer on...
MLA
Wu, Yunghong, et al. “Microwave PtSi-Si Schottky-Barrier-Detector Diode Fabrication Using an Implanted Active Layer On..” IEEE Transactions on Microwave Theory & Techniques, vol. 46, no. 5, May 1998, p. 641. EBSCOhost, https://doi.org/10.1109/22.668676.
APA
Wu, Y., Armstrong, B. M., Gamble, H. S., Hu, Z., Chen, Q., Yang, S., Fusco, V. F., & Stewart, J. A. C. (1998). Microwave PtSi-Si schottky-barrier-detector diode fabrication using an implanted active layer on.. IEEE Transactions on Microwave Theory & Techniques, 46(5), 641. https://doi.org/10.1109/22.668676
Chicago
Wu, Yunghong, B. Mervyn Armstrong, Harold S. Gamble, Zhirun Hu, Qiang Chen, Suidong Yang, Vincent F. Fusco, and J.A. Carson Stewart. 1998. “Microwave PtSi-Si Schottky-Barrier-Detector Diode Fabrication Using an Implanted Active Layer On..” IEEE Transactions on Microwave Theory & Techniques 46 (5): 641. doi:10.1109/22.668676.