Integration of MOSFETs with SiGe dots as stressor material

MLA

Nanver, L. K., et al. “Integration of MOSFETs with SiGe Dots as Stressor Material.” Solid-State Electronics, vol. 60, no. 1, June 2011, pp. 75–83. EBSCOhost, https://doi.org/10.1016/j.sse.2011.01.038.

APA

Nanver, L. K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J. J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., & Bonera, E. (2011). Integration of MOSFETs with SiGe dots as stressor material. Solid-State Electronics, 60(1), 75–83. https://doi.org/10.1016/j.sse.2011.01.038

Chicago

Nanver, L.K., V. Jovanović, C. Biasotto, J. Moers, D. Grützmacher, J.J. Zhang, N. Hrauda, et al. 2011. “Integration of MOSFETs with SiGe Dots as Stressor Material.” Solid-State Electronics 60 (1): 75–83. doi:10.1016/j.sse.2011.01.038.