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Impact of Gate Direct Tunneling Current on Circuit Performance: A Simulation Study.
- Source :
-
IEEE Transactions on Electron Devices . Dec2001, Vol. 48 Issue 12, p2823. 7p. 10 Diagrams, 2 Charts. - Publication Year :
- 2001
-
Abstract
- Discusses the influence of gate direct tunneling current on ultrathin gate oxide metallic oxide semiconductors (MOS). Analysis of the effect of gate direct tunneling current in oxide scaling; Comparison between the I[subgate] limit of the international technological roadmap for semiconductors (ITRS); Significance of a dual-gate oxide process in device scaling.
- Subjects :
- *METAL oxide semiconductors
*ELECTRIC circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 6001405
- Full Text :
- https://doi.org/10.1109/16.974710