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Significant increase of crystalline quality and green emission by an interface modification of InGaN/GaN quantum wells.
- Source :
-
Applied Physics A: Materials Science & Processing . May2011, Vol. 103 Issue 2, p317-321. 5p. 2 Color Photographs, 1 Black and White Photograph, 1 Diagram, 1 Graph. - Publication Year :
- 2011
-
Abstract
- GaN-to-InGaN interface modification by predeposition of an ultrathin In-rich InGaN incomplete layer followed by a thin triangular InGaN well layer was employed to overcome the negative effects of polarization field on light emission efficiency of InGaN/GaN quantum wells as well as to improve the crystalline quality by avoidance of a significant strain generation and enhanced surfactant effect. Further, the interface modification induced energy band structure engineering reduces the spatial separation of electrons and holes, and thus increases the carrier recombination rate. The improvement in crystalline quality, localized potential fluctuation, and energy band engineering contribute to the significant increase of green emission of the InGaN/GaN quantum wells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 103
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 59984439
- Full Text :
- https://doi.org/10.1007/s00339-010-6113-2