Back to Search Start Over

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Authors :
Novaković, M.
Zhang, K.
Popović, M.
Bibić, N.
Hofsäss, H.
Lieb, K.P.
Source :
Nuclear Instruments & Methods in Physics Research Section B. May2011, Vol. 269 Issue 9, p881-885. 5p.
Publication Year :
2011

Abstract

Abstract: Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50nm on Si(100) wafers were bombarded at room temperature with 400-keV Xe+ ions at fluences of up to 3×1016 cm−2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700°C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δσ 2/Φ =3.0(4)nm4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400°C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co2Si→CoSi→CoSi2. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
0168583X
Volume :
269
Issue :
9
Database :
Academic Search Index
Journal :
Nuclear Instruments & Methods in Physics Research Section B
Publication Type :
Academic Journal
Accession number :
59925008
Full Text :
https://doi.org/10.1016/j.nimb.2010.12.077