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Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . May2011, Vol. 269 Issue 9, p881-885. 5p. - Publication Year :
- 2011
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Abstract
- Abstract: Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50nm on Si(100) wafers were bombarded at room temperature with 400-keV Xe+ ions at fluences of up to 3×1016 cm−2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700°C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δσ 2/Φ =3.0(4)nm4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400°C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co2Si→CoSi→CoSi2. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 269
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 59925008
- Full Text :
- https://doi.org/10.1016/j.nimb.2010.12.077