Organic field-effect transistors with polarizable gate insulators.

A quasi-stable threshold voltage (V[sub t]) shift is imparted onto field-effect transistors (FETs) with organic semiconductors and polymer dielectrics. Adjustment of V[sub t] from accumulation mode to zero or depletion mode is demonstrated for both p-channel and n-channel FETs, and is accomplished by applying a depletion voltage to the gate prior to device operation. Hydrophobic dielectrics and dopant-resistant semiconductors were advantageous. A pixel circuit that utilizes this nonvolatile memory element is proposed. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]