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Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique.
- Source :
-
Applied Physics Letters . 2/14/2011, Vol. 98 Issue 7, p072108. 3p. 1 Diagram, 1 Chart, 2 Graphs. - Publication Year :
- 2011
-
Abstract
- In this letter, a method of using selective area growth (SAG) technique was proposed to fabricate the enhancement-mode (E-mode) AlGaN/GaN heterostructure field effect transistors (HFETs), which can effectively avoid the plasma treatment damage to the active region of HFETs in comparison with the conventional methods. The SAG-HFETs exhibited a good performance of the maximum drain current of 300 mA/mm and peak transconductance of 135 mS/mm with a larger positive threshold voltage of 0.4 V. The results indicate that the SAG technique is a promising method to realize the high performance E-mode GaN based HFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 98
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 58509113
- Full Text :
- https://doi.org/10.1063/1.3553229