Cite
Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%
MLA
Lee, JaeWon, et al. “Growth of High-Quality InGaN/GaN LED Structures on (111) Si Substrates with Internal Quantum Efficiency Exceeding 50%.” Journal of Crystal Growth, vol. 315, no. 1, Jan. 2011, pp. 263–66. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2010.08.006.
APA
Lee, J., Tak, Y., Kim, J.-Y., Hong, H.-G., Chae, S., Min, B., Jeong, H., Yoo, J., Kim, J.-R., & Park, Y. (2011). Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%. Journal of Crystal Growth, 315(1), 263–266. https://doi.org/10.1016/j.jcrysgro.2010.08.006
Chicago
Lee, JaeWon, Youngjo Tak, Jun-Youn Kim, Hyun-Gi Hong, Suhee Chae, Bokki Min, Hyungsu Jeong, Jinwoo Yoo, Jong-Ryeol Kim, and Youngsoo Park. 2011. “Growth of High-Quality InGaN/GaN LED Structures on (111) Si Substrates with Internal Quantum Efficiency Exceeding 50%.” Journal of Crystal Growth 315 (1): 263–66. doi:10.1016/j.jcrysgro.2010.08.006.