Back to Search
Start Over
Growth of (110)-oriented CeO[sub 2] layers on (100) silicon substrates.
- Source :
-
Applied Physics Letters . 12/30/1991, Vol. 59 Issue 27, p3604. 3p. 2 Diagrams, 2 Graphs. - Publication Year :
- 1991
-
Abstract
- Examines the growth of (110)-oriented cerium dioxide (CeO[sub 2] layers on (100) silicon substrates. Importance of the electron-beam evaporation in CeO[sub 2] growth; Characteristics of CeO[sub 2] epitaxial layers; Interface between the amorphous layer and the silicon substrate.
- Subjects :
- *CERIUM oxides
*SILICON
*ELECTRON beams
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 59
- Issue :
- 27
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 5778326
- Full Text :
- https://doi.org/10.1063/1.105646