Direct and inverse Staebler–Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

Authors :: Arce, P.
Barcala, J.M.
Calvo, E.
Ferrando, A.
Josa, M.I.
Molinero, A.
Navarrete, J.
Oller, J.C.
Yuste, C.
Brochero, J.
Calderón, A.
Fernández, M.G.
Gómez, G.
González-Sánchez, F.J.
Martínez-Rivero, C.
Matorras, F.
Rodrigo, T.
Ruiz-Árbol, P.
Scodellaro, L.
Sobrón, M.
Source :: Nuclear Instruments & Methods in Physics Research Section A. Mar2011, Vol. 632 Issue 1, p164-166. 3p.
Publication Year :: 2011
Abstract: Abstract: The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681nm diode–laser and a 633nm He–Ne laser is presented. Both direct and inverse Staebler–Wronski effects are observed. [Copyright &y& Elsevier]

Subjects :: *HYDROGENATION
*OPTOELECTRONIC devices
*POSITION sensitive particle detectors
*SILICON
*AMORPHOUS substances
*LIGHT elements

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