Back to Search
Start Over
Channel scaling of hybrid GaN MOS-HEMTs
- Source :
-
Solid-State Electronics . Feb2011, Vol. 56 Issue 1, p111-115. 5p. - Publication Year :
- 2011
-
Abstract
- Abstract: In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (DIBL) is quantitatively evaluated. A specific on-resistance of 2.1mΩcm2 has been projected for a MOS channel length of 0.38μm. We also have assessed the impact of high-k gate dielectrics, such as Al2O3. In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing short channel effects. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 56
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 57517231
- Full Text :
- https://doi.org/10.1016/j.sse.2010.11.009