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Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
- Source :
-
Journal of Crystal Growth . Jan2011, Vol. 314 Issue 1, p202-206. 5p. - Publication Year :
- 2011
-
Abstract
- Abstract: We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photoluminescence spectra at 8K showed that the MQWs grown with a low amount of TEGa flow gave a strong single peak and a higher emission energy. High-resolution X-ray diffraction measurements showed a deterioration of the InGaN/GaN interfaces in the sample grown with the large TEGa flow. The luminescence thermal quenching characteristics suggested that more structural defects acting as non-radiative recombination centers formed in the MQWs when the TEGa flow increased. The results indicate that decreasing the TEGa flow help to build up a new growth balance during the growth of InGaN wells, leading to less structural defects, more homogeneous indium distribution and the abrupt MQWs interfaces. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 314
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 57302287
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2010.11.065