Anomalous luminescence behavior in the InAlGaN thin film

Abstract: Photoluminescence (PL) spectra of a quaternary alloy In0.014Al0.105Ga0.881N thin film grown by low pressure metalorganic chemical vapor deposition (MOCVD) are studied experimentally in the temperature range of 10–300K. It is shown that the temperature dependence can be well studied by the Eliseev''s model to characterize the scale of the exciton-localization effects for the exciton localization energy. Moreover, the Urbach energy was determined from an analysis of the low-energy side of the PL lineshape. From the temperature dependence of Urbach energy, the value of Urbach energy can be described by the Einstein oscillator model which takes into consideration the contributions from both the thermal and structural disorders. [Copyright &y& Elsevier]