Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike.

MLA

Onoda, Shinobu, et al. “Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike.” IEEE Transactions on Nuclear Science, vol. 57, no. 6, Dec. 2010, pp. 3373–79. EBSCOhost, https://doi.org/10.1109/TNS.2010.2070076.

APA

Onoda, S., Makino, T., Iwamoto, N., Vizkelethy, G., Kojima, K., Nozaki, S., & Ohshima, T. (2010). Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike. IEEE Transactions on Nuclear Science, 57(6), 3373–3379. https://doi.org/10.1109/TNS.2010.2070076

Chicago

Onoda, Shinobu, Takahiro Makino, Naoya Iwamoto, Gyorgy Vizkelethy, Kazutoshi Kojima, Shinji Nozaki, and Takeshi Ohshima. 2010. “Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike.” IEEE Transactions on Nuclear Science 57 (6): 3373–79. doi:10.1109/TNS.2010.2070076.