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Mechanisms leading to nonlinear electrical response of a nano p-SiC/silicone rubber composite.
- Source :
-
IEEE Transactions on Dielectrics & Electrical Insulation . 12/01/2010, Vol. 17 Issue 6, p1687-1696. 0p. - Publication Year :
- 2010
-
Abstract
- It is well known that hopping of charge carriers via spatially and energetically distributed localized states is a primary transport mechanism in many disordered semiconductors and polymeric dielectrics. In this contribution, the nonlinear I-V physics of a 25vol% 50nm p-SiC/silicone rubber composite for high voltage field grading application was investigated, and a composite bulk hopping mechanism proposed. It is hypothesized that nearest-neighbor hole hopping occurs through thin rubbery layers between the SiC particles, and is the mechanism governing the nonlinear electric response of SiC/silicone rubber nanocomposites. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10709878
- Volume :
- 17
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Dielectrics & Electrical Insulation
- Publication Type :
- Academic Journal
- Accession number :
- 57254117
- Full Text :
- https://doi.org/10.1109/TDEI.2010.5658218