Electrochemical preparation and characterization of three-dimensional nanostructured Sn2S3 semiconductor films with nanorod network

Abstract: Three-dimensional (3D) nanostructured Sn2S3 semiconductor films have been prepared on ITO-coated glass substrates by potentiostatic electrodeposition at −0.80V (vs. SCE) from a novel plating bath containing K4P2O3 as a complexing agent and Na2SO3 as a stabilizing agent and by subsequent annealing. Results showed that the annealing drove the as-deposited Sn2S3 films to grow from a granular structure into a nanorod network structure. The nanorods were around 50–100nm in diameter and 1000nm in length. The band gap of the annealed film was 1.65eV and the conductivity was n type. The carrier mobility achieved up to 20.5cm2 V−1 s−1 due to the direct electrical pathways provided by the nanorod network. [ABSTRACT FROM AUTHOR]