InAs/GaSb-based lateral current injection laser.

Authors :: Laikhtman, B.
Luryi, S.
Belenky, G.
Source :: Journal of Applied Physics. Dec2001, Vol. 90 Issue 11, p5478. 5p. 3 Diagrams, 1 Chart, 1 Graph.
Publication Year :: 2001
Abstract: We propose a contact structure for InAs/GaSb multilayers, such that electrons and holes are selectively injected in alternating layers. This enables the implementation of a far-infrared lateral current injection laser based on the InAs/GaSb superlattice. Preliminary calculation of the gain shows that both surface- and edge-emitting designs are possible. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]