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Electromigration critical length effect in Cu/oxide dual-damascene interconnects.
- Source :
-
Applied Physics Letters . 11/12/2001, Vol. 79 Issue 20, p3236. 3p. 3 Diagrams, 1 Chart, 4 Graphs. - Publication Year :
- 2001
-
Abstract
- Electromigration tests at temperatures between 340 and 400 °C and current densities between 1.0 and 3.0 MA/cm[sup 2] have been performed to determine the temperature dependence of the critical length effect in 0.5-μm-wide Cu/oxide dual-damascene interconnects with 0.1 μm silicon nitride (SiN[sub x]) passivation. A focused-ion-beam-induced contrast imaging technique is used to locate failure sites of critical length test structures. Statistical analysis [E. T. Ogawa et al., Appl. Phys. Lett. 78, 18 (2001)] yields a threshold-length product (jL)[sub c], of 3700 A/cm, and a temperature dependence is not observed within the temperature range 340–400 °C. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INTEGRATED circuits
*ELECTRODIFFUSION
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 79
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 5549519
- Full Text :
- https://doi.org/10.1063/1.1418034