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Microstructure of SiC fiber fabricated by two-stage chemical vapor deposition on tungsten filament
- Source :
-
Journal of Crystal Growth . Dec2010, Vol. 313 Issue 1, p56-61. 6p. - Publication Year :
- 2010
-
Abstract
- Abstract: Continuous silicon carbide (SiC) fiber with a diameter of about 100μm was fabricated by two-stage chemical vapor deposition on tungsten filament. Microstructure of the fiber was investigated by means of scanning electron microscopy, X-ray diffraction, transmission electron microscopy and Raman spectrometry. The results showed that the fiber consists of tungsten core, a W/SiC interfacial reaction zone with the reaction products of W5Si3 and WC, and a predominant β-SiC layer. The W/SiC interface can be described as W/W5Si3/WC/SiC. The SiC originates at the surface of the WC with a buffer layer, in which β-SiC crystallites nucleate and grow with their preferred (111) orientation, exhibiting strong 〈111〉 fiber texture. Raman spectra revealed that the SiC in the fiber is stoichiometric, which is composed of β-SiC and amorphous SiC. Furthermore, the formation mechanism of W/SiC interfacial reaction zone and structural evolution of SiC are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 313
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 55393145
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2010.10.001