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Direct growth of CdTe thick films on the Medipix2 pixel detector chip.
- Source :
-
Journal of Applied Physics . Nov2010, Vol. 108 Issue 9, p094504. 4p. 6 Graphs. - Publication Year :
- 2010
-
Abstract
- Polycrystalline CdTe layers were directly deposited on the Medipix2 readout chip by physical vapor deposition using a Riber molecular beam epitaxy 2300. Sb2Te3 was evaporated as backside contact material, resulting in an M-π-p diode structure comprising the pixel contact material, the intentionally undoped CdTe, and Sb2Te3. It was possible to achieve x-ray images at 60 kVp. In addition, thermally oxidized Si wafers were coated with a comparable M-π-p structure grown under identical conditions, to investigate electrical properties of the films. The specific resistance of the layers was found to be 3.85×108 Ω cm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 108
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 55200389
- Full Text :
- https://doi.org/10.1063/1.3492694