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Direct growth of CdTe thick films on the Medipix2 pixel detector chip.

Authors :
Sorgenfrei, R.
Zwerger, A.
Disch, C.
Bachem, K. H.
Fiederle, M.
Source :
Journal of Applied Physics. Nov2010, Vol. 108 Issue 9, p094504. 4p. 6 Graphs.
Publication Year :
2010

Abstract

Polycrystalline CdTe layers were directly deposited on the Medipix2 readout chip by physical vapor deposition using a Riber molecular beam epitaxy 2300. Sb2Te3 was evaporated as backside contact material, resulting in an M-π-p diode structure comprising the pixel contact material, the intentionally undoped CdTe, and Sb2Te3. It was possible to achieve x-ray images at 60 kVp. In addition, thermally oxidized Si wafers were coated with a comparable M-π-p structure grown under identical conditions, to investigate electrical properties of the films. The specific resistance of the layers was found to be 3.85×108 Ω cm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
108
Issue :
9
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
55200389
Full Text :
https://doi.org/10.1063/1.3492694