Towards Large Area Growth of 3C-SiC.

In this work we have analyzed the possibility of upscaling the growth of 3C-SiC. The growth was done at different temperatures to find limiting mechanisms of the growth rate and to examine the morphology of grown layers. Coverage by 3C-SiC increases when increasing temperature, however more twins appeared. Activation energy of the growth is 130 kcal/mol-showing that growth rate limiting mechanism is sublimation of the source. We discuss the influence of large area 6H-SiC wafers on the formation of 3C-SiC, in which the change in basal plane orientation could also influence the growth of 3C-SiC. [ABSTRACT FROM AUTHOR]