Investigation of Nanocarbon Films on SiC Surface Formed by Sublimation Epitaxy in Vacuum.

Authors :: Lebedev, S. P.
Lebedev, A. A.
Kotousova, I. S.
Lavrent'ev, A. A.
Makarenko, I. V.
Petrov, V. N.
Smirnov, A. N.
Titkov, A. N.
Source :: Fullerenes, Nanotubes & Carbon Nanostructures. Oct-Dec2010, Vol. 18 Issue 4-6, p501-504. 4p. 2 Black and White Photographs, 2 Graphs.
Publication Year :: 2010
Abstract: The possibility of forming nanocarbon films on the SiC surface with the use of the technology employed in sublimation epitaxy of silicon carbide has been demonstrated. The temperature range for synthesis of nanocarbon films has been found. The presence in films of two-dimensional graphite crystals has been revealed. [ABSTRACT FROM AUTHOR]

Subjects :: *EPITAXY
*CRYSTAL growth
*SILICON carbide
*SUBLIMATION (Chemistry)
*GRAPHITE

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