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Effect of cadmium sulphide quantum dot processing and post thermal annealing on P3HT/PCBM photovoltaic device

Authors :
Khan, M. Taukeer
Bhargav, Ranoo
Kaur, Amarjeet
Dhawan, S.K.
Chand, S.
Source :
Thin Solid Films. Nov2010, Vol. 519 Issue 3, p1007-1011. 5p.
Publication Year :
2010

Abstract

Abstract: The present study demonstrates the effect on photovoltaic performance of poly(3-hexylthiophene) (P3HT) on doping of cadmium sulphide (CdS) quantum dots (QDs). The P3HT/CdS nanocomposite shows a 10nm blue shift in the UV–vis absorption relative to the pristine P3HT. The blue shift in the absorption of the P3HT/CdS nanocomposite can be assigned to the quantum confinement effect from the CdS nanoparticles. Significant PL quenching was observed for the nanocomposite films, attributed to additional decaying paths of the excited electrons through the CdS. Solar cell performance of pure P3HT and dispersed with CdS QDs have been studied in the device configuration viz indium tin oxide (ITO)/poly(3,4-ethylendioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS)/P3HT:PCBM/Al and ITO/PEDOT:PSS/ P3HT:CdS:PCBM/Al, respectively. Incorporation of CdS QDs in the P3HT matrix results in the enhancement in the device efficiency (ɳ) of the solar cell from 0.45 to 0.87%. Postproduction thermal annealing at 150°C for 30min improves device performance due to enhancement in the device parameters like FF, VOC and improvement in contact between active layer and Al. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00406090
Volume :
519
Issue :
3
Database :
Academic Search Index
Journal :
Thin Solid Films
Publication Type :
Academic Journal
Accession number :
54606176
Full Text :
https://doi.org/10.1016/j.tsf.2010.08.032