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Indium segregation in AlInN/AlN/GaN heterostructures.
- Source :
-
Applied Physics Letters . 9/27/2010, Vol. 97 Issue 13, p132114. 3p. - Publication Year :
- 2010
-
Abstract
- AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation (and/or In-diffusion) and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 54094277
- Full Text :
- https://doi.org/10.1063/1.3489433