A dual-band divide-by-2 injection locked frequency divider in 0.35-μm SiGe BiCMOS.

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35-μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross-coupled HBT LC-tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free-running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low-(high-) frequency band. The divide-by-2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low-(high-) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762-2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586 [ABSTRACT FROM AUTHOR]