Estudio mediante tight-binding y método de Monte Carlo de las propiedades electrónicas de Si y Ge.

The electronic states were calculated in volume for the semiconductors Silicon (Si) and Germanium (Ge), using the method Tight-Binding (TB), keeping in mind interactions up to first neighbors. The matrix Hamiltonian was built using a base of orbital atomic s, p and the excited states s*. Based in this approach you proceeded to calculate the relationships of dispersion of the energy E against wave number ᵏ̄, for some addresses of high symmetry in the first zone of Brillouin (PBZ). The characters of the bands and the densities of states were determined (DOS) total and partial according to the orbital characters of the different ones used in the base in which the matrix hamiltonan was written. [ABSTRACT FROM AUTHOR]