Electron And Hole Energy Levels In GaAs-AlwGa1-wAs Double Quantum Wells In Presence Of A Uniform Magnetic Field.

In this work we studied the behavior of electron and hole energy levels in GaAs-AlwGa1-w As double quantum wells within the effective mass approach. The system studied was in presence of a uniform magnetic field. In our case, we considered a configuration in which the magnetic field is applied in the growth direction of the heterostructure. We present the explicit analysis to identify the no-correlated electron-hole transistion energy as a function of the Aluminium's concentration, heterostructure geometry and the applied magnetic field. [ABSTRACT FROM AUTHOR]