Análisis por Fotorreflectancia en Pozos Cuánticos de InGaAs/InAlAs Usando Formas de Líneas Asimétricas.

The InGaAs/InA1As quantum wells have an enormous potential as semiconductors lasers, but factors like the interfaces roughness, internal defects, located pressures or local electric fields, they alter the width of the laser light beam with the rising loss of the intensity and coherence. Therefore in this work we realized the photoreflectance analysis in two In- GaAs/InA1As quantum wells semiconductors heterostructures sample with thicknesses from 5 nm to 13 nm. The photoreflectance spectra were carried out in the rank of temperatures from 220K to 300K. For the analysis of these spectra we used the two dimensional critical point of third derived from asymmetric Lorentzian lineshape. Of the respectives fittings we obtained that the experimental transition energy values agree with the calculated theoretically values. It was also found that the broadening parameters are proportionals to the temperature as expected and that the factors of asymmetry are direct proportionals to the temperature, that which can be attributed to the local tensions in the interfaces. [ABSTRACT FROM AUTHOR]